Synthesis and electromagnetic transport of large-area 2D WTe2 thin film

被引：0

作者：

Yumeng Zhang ^{[1
,2
]}

Zhejia Wang ^{[3
,4
]}

Jiaheng Feng ^{[3
,4
]}

Shuaiqiang Ming ^{[1
,3
]}

Furong Qu ^{[1
,2
]}

Yang Xia ^{[1
,2
]}

Meng He ^{[1
]}

Zhimin Hu ^{[1
,2
]}

Jing Wang ^{[5
]}

机构：

[1] Institute of Microelectronics of the Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

[3] Jiaxing Microelectronics Instrument and Equipment Engineering Center of the Chinese Academy of Sciences

[4] Jiaxing Kemin Electronic Equipment Technology Co., Ltd.

[5] Institute of Physics of the Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2022年 / 43卷 / 10期

关键词：

D O I：

暂无

中图分类号：

TB383.2 []; O441 [电磁学];

学科分类号：

0809 ;

摘要：

Tungsten telluride thin films were successfully prepared on monocrystal sapphire substrates by using atomic layer deposition and chemical vapor deposition technology, and the effects of different tellurization temperatures on the properties of tungsten telluride films were investigated. The growth rate, crystal structure and composition of the film samples were characterized and analyzed by using scanning electron microscope, Raman spectroscopy and X-ray photoelectron spectroscopy. The results showed that tungsten telluride thin films with good crystal orientation in (001) were obtained at telluride temperature of 550 ℃. When the telluride temperature reached 570 ℃, the tungsten telluride began to decompose and unsaturated magnetoresistance was found.

引用

页码：54 / 59

页数：6

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