Polarization sensitive photodetector based on quasi-1D ZrSe3

被引：0
|
作者：
Xingang Wang [1 ]
Tao Xiong [2 ]
Kaiyao Xin [2 ,3 ]
Juehan Yang [2 ]
Yueyang Liu [2 ]
Zeping Zhao [1 ]
Jianguo Liu [1 ]
Zhongming Wei [2 ,3 ]
机构：
[1] The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences
[2] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
[3] Sino-Danish Center for Education and Research, Sino-Danish College University of Chinese Academy of Sciences
来源：
Journal of Semiconductors | 2022年 / 43卷 / 10期
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TN15 [光电器件、光电管];
学科分类号：
0803 ;
摘要：
The in-plane anisotropy of transition metal trichalcogenides(MX) has a significant impact on the molding of materials and MXis a perfect choice for polarized photodetectors. In this study, the crystal structure, optical and optoelectronic anisotropy of one kind of quasi-one-dimensional(1D) semiconductors, ZrSe, are systematically investigated through experiments and theoretical studies. The ZrSe-based photodetector shows impressive wide spectral response from ultraviolet(UV) to near infrared(NIR) and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·Wand detectivity of ～106 at 532nm. Moreover, the dichroic ratio of ZrSe-based polarized photodetector is around 1.1 at 808 nm. This study suggests that ZrSehas potential in optoelectronic applications and polarization detectors.
引用
收藏
页码：43 / 53
页数：11
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