Polarization sensitive photodetector based on quasi-1D ZrSe3

被引：0

作者：

Xingang Wang ^{[1
]}

Tao Xiong ^{[2
]}

Kaiyao Xin ^{[2
,3
]}

Juehan Yang ^{[2
]}

Yueyang Liu ^{[2
]}

Zeping Zhao ^{[1
]}

Jianguo Liu ^{[1
]}

Zhongming Wei ^{[2
,3
]}

机构：

[1] The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences

[2] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences

[3] Sino-Danish Center for Education and Research, Sino-Danish College University of Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2022年 / 43卷 / 10期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TN15 [光电器件、光电管];

学科分类号：

0803 ;

摘要：

The in-plane anisotropy of transition metal trichalcogenides(MX) has a significant impact on the molding of materials and MXis a perfect choice for polarized photodetectors. In this study, the crystal structure, optical and optoelectronic anisotropy of one kind of quasi-one-dimensional(1D) semiconductors, ZrSe, are systematically investigated through experiments and theoretical studies. The ZrSe-based photodetector shows impressive wide spectral response from ultraviolet(UV) to near infrared(NIR) and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·Wand detectivity of ～106 at 532nm. Moreover, the dichroic ratio of ZrSe-based polarized photodetector is around 1.1 at 808 nm. This study suggests that ZrSehas potential in optoelectronic applications and polarization detectors.

引用

页码：43 / 53

页数：11

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