Optical Characteristics of InAs Quantum Dots on GaAs Matrix by Using Various InGaAs Structures

被引：0
|
作者：
孔令民
吴正云
机构：
[1] Department of Physics Xiamen University Xiamen 361005 China
[2] Department of Physics Xiamen University Xiamen 361005 China
来源：
Journal of Wuhan University of Technology(Materials Science) | 2006年 / 02期
关键词：
InGaAs layer; InAs quantum dots; time-resolved PL spectra;
D O I：
暂无
中图分类号：
O472.3 [];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
The effects of various InGaAs layers on the structural and optical properties of InAs self-assembled quantum dots(QDs) grown by molecular-beam epitaxy (MBE) were investigated. The emission wavelength of 1317 nm was obtained by embedding InAs QDs in InGaAs/GaAs quantum well. The temperature-dependent and timed-resolved photoluminescence (TDPL and TRPL) were used to study the dynamic characteristics of carriers. InGaAs cap layer may improve the quality of quantum dots for the strain relaxation around QDs, which results in a stronger PL intensity and an increase of PL peak lifetime up to 170 K. We found that InGaAs buffer layer may reduce the PL peak lifetime of InAs QDs, which is due to the buffer layer accelerating the carrier migration. The results also show that InGaAs cap layer can increase the temperature point when the thermal reemission and nonradiative recombination contribute significantly to the carrier dynamics.
引用
收藏
页码：76 / 79
页数：4
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