Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

被引：5

作者：

Shu, G. W. ^{[1
]}

Wang, J. S. ^{[1
]}

Shen, J. L. ^{[1
]}

Hsiao, R. S. ^{[2
]}

Chen, J. F. ^{[2
]}

Lin, T. Y. ^{[3
]}

Wu, C. H. ^{[4
]}

Huang, Y. H. ^{[4
]}

Yang, T. N. ^{[4
]}

机构：

[1] Chung Yuan Christian Univ, Dept Phys, Chungli, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan

[3] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung, Taiwan

[4] Atom Energy Council, Inst Nucl Energy Res, Long Tan, Taiwan

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2010年 / 166卷 / 01期

关键词：

InAs; Quantum dots; Photoluminescence; OPTICAL-PROPERTIES; STRAIN;

D O I：

10.1016/j.mseb.2009.09.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：46 / 49

页数：4

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