Influence of body contact of SOI MOSFETs on the thermal conductance of devices

被引：0
|
作者：
卢烁今 [1 ]
刘梦新 [1 ]
韩郑生 [1 ]
机构：
[1] Institute of Microelectronics,Chinese Academy of Sciences
来源：
半导体学报 | 2009年 / 30卷 / 09期
关键词：
thermal conductance; body contact; parameter extraction; power dissipation;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
The thermal conductance of devices with different body contacts is studied.A new analytical expression is proposed.This expression can be used in parameter extraction,which gives both good efficiency and high precision.The ratio of thermal conductance of the body contact region to that of the body region is nearly equal to the ratio of the area.The use of an H shape gate body contact is suggested to aid power dissipation in SOI MOSFETs.
引用
收藏
页码：26 / 28
页数：3
相关论文
共 50 条
  • [21] MODELING OF THE SUBTHRESHOLD CHARACTERISTICS OF SOI MOSFETS WITH FLOATING BODY
    MATLOUBIAN, M
    CHEN, CED
    MAO, BY
    SUNDARESAN, R
    POLLACK, GP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (09) : 1985 - 1994
  • [22] Effective body contact in SOI devices by Partial Trench Isolated Body-Tied (PTIBT) structure
    Min, BW
    Mendicino, M
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 469 - 472
  • [23] THE EFFECT OF BODY RESISTANCE ON THE BREAKDOWN CHARACTERISTICS OF SOI MOSFETS
    SUH, D
    FOSSUM, JG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) : 1063 - 1066
  • [24] Application of a new body contact to SOI LDMOSFET devices, three-dimensional simulation
    Daghighi, Arash
    Osman, Mohamed A.
    CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2007, : 529 - +
  • [25] SOI MOSFETs with buried alumina: Thermal and electrical aspects
    Oshima, K
    Cristoloveanu, S
    Guillaumot, B
    Deleonibus, S
    Iwai, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (04) : G257 - G261
  • [26] Thermal Resistance Characterization for Multifinger SOI-MOSFETs
    Gonzalez, Benito
    Rodriguez, Raul
    Lazaro, Antonio
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (09) : 3626 - 3632
  • [27] MODELING OF THERMAL CONTACT CONDUCTANCE
    Murashov, Mikhail V.
    Panin, Sergey D.
    PROCEEDINGS OF THE ASME INTERNATIONAL HEAT TRANSFER CONFERENCE - 2010, VOL 6: MICROCHANNELS, NANO, NANOFLUIDS, SPRAY COOLING, POROUS MEDIA, 2010, : 387 - 392
  • [28] Measurements of thermal contact conductance
    Rosochowska, M
    Balendra, R
    Chodnikiewicz, K
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2003, 135 (2-3) : 204 - 210
  • [29] Influence of surface preparation on thermal contact conductance of stainless steel and aluminum
    Parmenter, KE
    Marschall, E
    EXPERIMENTAL HEAT TRANSFER, 1995, 8 (03) : 195 - 208
  • [30] Inversion-layer induced body current in SOI MOSFETs with body contacts
    Lin, HC
    Lin, JM
    Chang, RC
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (02) : 111 - 113
12345