Self-Aligned Titanium Silicide NMOS and 12-Bit Multiplier

被引：0
|
作者：
Zhang Dingkang
机构：
来源：
Journal of Systems Engineering and Electronics | 1992年 / 04期
关键词：
NMOS; show; length; Self-Aligned Titanium Silicide NMOS and 12-Bit Multiplier; LDD;
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学科分类号：
摘要：
Self-aligned Titanium Silicide (Salicide), Light-Doped Drain (LDD) technology was studied. Results show that, this technology suppresses effectivily short-channel effects. The sheet resistance of active region decreases by four times. The sheet resistance of polysilicon gate region decreases by one order of magnitute. Using this technology, the speed of the 3 μm NMOS 12-bits multiplier increases by two times relative to conventional one.
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页码：19 / 20 +2
页数：3
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