Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process

被引：0

作者：

Min Liu ^{[1
,2
]}

Ziteng Cai ^{[1
,3
]}

Jian Liu ^{[1
,2
]}

Nanjian Wu ^{[1
,2
]}

Liyuan Liu ^{[1
,2
]}

机构：

[1] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences

[2] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences

[3] Faculty of Information Technology, Beijing University of Technology

来源：

Journal of Semiconductors | 2023年 / 10期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TN248 [激光器]; O441.4 [电磁波与电磁场];

学科分类号：

摘要：

This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process. Based on the plasma-wave theory proposed by Dyakonov and Shur, we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser(QCL). Furthermore, we present a fully integrated high-speed 32 × 32-pixel 3.0 THz CMOS image sensor(CIS). The full CIS measures 2.81 × 5.39 mm2and achieves a 423 V/W responsivity(Rv) and a 5.3 nW integral noise equivalent power(NEP) at room temperature. In experiments, we demonstrate a testing speed reaching 319 fps under continuous-wave(CW) illumination of a 3.0 THz QCL. The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.

引用

页码：71 / 78

页数：8

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