China's first ZnO nanorod field-effect transistor developed at CAS

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作者：
机构：
来源：
Bulletin of the Chinese Academy of Sciences | 2009年 / 01期
关键词：
ZnO; FET; China’s first ZnO nanorod field-effect transistor developed at CAS;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Recently,an zinc oxide (ZnO) nanorod field-effect transistor (FET), the first of its kind as a nano-device in China, was successfully fabricated by scientists with the CAS Institute
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页码：17 / 17
页数：1
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