Design of ternary clocked adiabatic static random access memory

被引:0
|
作者
汪鹏君 [1 ]
梅凤娜 [1 ]
机构
[1] Institute of Circuits and Systems,Ningbo University
基金
中国国家自然科学基金;
关键词
multi-valued logic; adiabatic; ternary SRAM; circuit design;
D O I
暂无
中图分类号
TP333.8 [随机存取存贮器];
学科分类号
081201 ;
摘要
Based on multi-valued logic,adiabatic circuits and the structure of ternary static random access memory (SRAM),a design scheme of a novel ternary clocked adiabatic SRAM is presented.The scheme adopts bootstrapped NMOS transistors,and an address decoder,a storage cell and a sense amplifier are charged and discharged in the adiabatic way,so the charges stored in the large switch capacitance of word lines,bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals.The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption.Compared with ternary conventional SRAM,the average power consumption of the ternary adiabatic SRAM saves up to 68%in the same conditions.
引用
收藏
页码:147 / 151
页数:5
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