The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells

被引：0

作者：

刘杨 ^{[1
]}

刘玮 ^{[1
]}

陈梦馨 ^{[2
]}

史思涵 ^{[1
]}

何志超 ^{[1
]}

巩金龙 ^{[2
]}

王拓 ^{[2
]}

周志强 ^{[1
]}

刘芳芳 ^{[1
]}

孙云 ^{[1
]}

徐术 ^{[3
]}

机构：

[1] Tianjin Key Laboratory of Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University

[2] Key Laboratory for Green Chemical Technology of Ministry of Education,Collaborative Innovation Center of Chemical Science and Engineering (Tianjin),School of Chemical Engineering and Technology,Tianjin University

[3] Davidson School of Chemical Engineering,Purdue University

来源：

Optoelectronics Letters | 2018年 / 14卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Al; Ga;

D O I：

暂无

中图分类号：

TM914.42 [];

学科分类号：

080502 ;

摘要：

With reducing the absorber layer thickness and processing temperature,the recombination at the back interface is severe,which both can result in the decrease of open-circuit voltage and fill factor.In this paper,we prepare Al2O3by atomic layer deposition(ALD),and investigate the effect of its thickness on the performance of Cu(In,Ga)Se2(CIGS)solar cell.The device recombination activation energy(EA)is increased from 1.04 eV to 1.11 eV when the thickness of Al2O3is varied from 0 nm to 1 nm,and the height of back barrier is decreased from 48.54 meV to 38.05 meV.An efficiency of 11.57%is achieved with 0.88-μm-thick CIGS absorber layer.

引用

页码：363 / 366

页数：4

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