Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

被引：0
|
作者：
朱岩 [1 ]
倪海桥 [1 ]
王海莉 [1 ]
贺继方 [1 ]
李密峰 [1 ]
尚向军 [1 ]
牛智川 [1 ]
机构：
[1] State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
来源：
Optoelectronics Letters | 2011年 / 7卷 / 05期
基金：
中国国家自然科学基金;
关键词：
InGaAs; meta; Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy; well;
D O I：
暂无
中图分类号：
TN248.4 [半导体激光器];
学科分类号：
0803 ; 080401 ; 080901 ;
摘要：
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported.
引用
收藏
页码：325 / 329
页数：5
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