Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

被引：1
|
作者：
Zhu Y. [1 ]
Ni H. [1 ]
Wang H. [1 ]
He J. [1 ]
Li M. [1 ]
Shang X. [1 ]
Niu Z. [1 ]
机构：
[1] State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
来源：
Optoelectronics Letters | 2011年 / 7卷 / 5期
基金：
中国国家自然科学基金;
关键词：
GaAs; Molecular Beam Epitaxy; Quantum Well; Apply Physic Letter; Threshold Current Density;
D O I：
10.1007/s11801-011-1032-9
中图分类号：
学科分类号：
摘要：
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported. © 2011 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
引用
收藏
页码：325 / 329
页数：4
相关论文
共 50 条
  • [1] Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
    朱岩
    倪海桥
    王海莉
    贺继方
    李密峰
    尚向军
    牛智川
    [J]. Optoelectronics Letters, 2011, 7 (05) : 325 - 329
  • [2] Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 μ on GaAs Grown by Molecular Beam Epitaxy
    Wang Hai-Li
    Wu Dong-Hai
    Wu Bing-peng
    Ni Hqiao-Qiao
    Huang She-Song
    Xiong Yong-Hua
    Wang Peng-Fei
    Han Qin
    Niu Zhi-Chuan
    Tangring, I.
    Wang, S. M.
    [J]. CHINESE PHYSICS LETTERS, 2009, 26 (01)
  • [3] Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy
    Radhakrishnan, K
    Yuan, K
    Hong, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 261 (01) : 16 - 21
  • [4] Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
    Wu Bing-Peng
    Wu Dong-Hai
    Ni Hai-Qiao
    Huang She-Song
    Zhan Feng
    Xiong Yong-Hua
    Xu Ying-Qiang
    Niu Zhi-Chuan
    [J]. CHINESE PHYSICS LETTERS, 2007, 24 (12) : 3543 - 3546
  • [5] Optimization of 1.3 μm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
    Tångring, I
    Wang, SM
    Sadeghi, M
    Gu, QF
    Larsson, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 281 (2-4) : 220 - 226
  • [6] MOLECULAR BEAM EPITAXY GROWTH OF A 1.58 μm InGaAs QUANTUM WELL LASER ON GaAs
    Tangring, I.
    Wang, S. M.
    Larsson, A.
    Ni, H. Q.
    Wu, B. P.
    Wu, D. H.
    Xiong, Y. H.
    Huang, S. S.
    Niu, Z. C.
    [J]. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 327 - +
  • [7] Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
    贺继方
    尚向军
    李密锋
    朱岩
    常秀英
    倪海桥
    徐应强
    牛智川
    [J]. Journal of Semiconductors, 2011, 32 (04) : 41 - 45
  • [8] Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
    He Jifang
    Shang Xiangjun
    Li Mifeng
    Zhu Yan
    Chang Xiuying
    Ni Haiqiao
    Xu Yingqiang
    Niu Zhichuan
    [J]. JOURNAL OF SEMICONDUCTORS, 2011, 32 (04)
  • [9] InGaAs/InP single quantum well structure grown on GaAs substrate with linearly graded metamorphic InGaP buffer layer by solid source molecular beam epitaxy
    Radhakrishnan, K
    Yuan, K
    Zheng, HQ
    [J]. SOLID-STATE ELECTRONICS, 2002, 46 (06) : 877 - 883
  • [10] Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy
    Wei, YQ
    Wang, SM
    Wang, XD
    Zhao, QX
    Sadeghi, M
    Tångring, I
    Larsson, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 747 - 750
12345