Quantum dot quantum cascade photodetector using a laser structure

被引:0
|
作者
王风娇 [1 ]
卓宁 [1 ]
刘舒曼 [1 ,2 ]
任飞 [1 ]
翟慎强 [1 ]
刘俊岐 [1 ,2 ]
张锦川 [1 ]
刘峰奇 [1 ,2 ]
王占国 [1 ]
机构
[1] Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices
[2] College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences
基金
中国国家自然科学基金;
关键词
As; In; Quantum dot quantum cascade photodetector using a laser structure; QDs; QCD;
D O I
暂无
中图分类号
TN15 [光电器件、光电管]; TN248 [激光器];
学科分类号
0803 ; 080401 ; 080901 ;
摘要
We report on a quantum dot quantum cascade detector(QD-QCD), whose structure is derived from a QD cascade laser. In this structure, more ordered In As QD layers formed in the Stranski–Krastanow growth mode on a thin Ga As buffer layer are incorporated into the active region. This QD-QCD can operate up to room temperature with a peak detection wavelength of 5.8 μm. A responsivity of 3.1 mA/W at 160 K and a detectivity of 3.6 × 10;Jones at 77 K are obtained. The initial performance of the detector is promising, and, by further optimizing the growth of InA s QDs, integrated QD-quantum cascade laser/QCD applications are expected.
引用
收藏
页码:89 / 93
页数:5
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