Thermal analysis of GaN-based laser diode mini-array

被引：0

作者：

胡俊杰 ^{[1
,2
]}

张书明 ^{[1
]}

李德尧 ^{[1
]}

张峰 ^{[1
]}

冯美鑫 ^{[1
]}

温鹏雁 ^{[1
]}

刘建平 ^{[1
]}

张立群 ^{[1
]}

杨辉 ^{[1
]}

机构：

[1] Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

来源：

Chinese Physics B | 2018年 / 09期

基金：

中国国家自然科学基金;

关键词：

GaN laser diode; laser diode array; thermal analysis; temperature distribution;

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）];

学科分类号：

摘要：

Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.

引用

页码：315 / 319

页数：5

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