Advanced SPICE-Modeling of 4H-SiC MESFETs

被引：1
|
作者：
徐跃杭
徐锐敏
延波
王磊
机构：
[1] Chengdu 610054 China
[2] School of Electronic Engineering University of Electronic Science and Technology of China
来源：
JournalofElectronicScienceandTechnologyofChina | 2007年 / 01期
关键词：
4H-SiC MESFET; large signal model; simulation program with integrated circuit emphasis(SPICE);
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
摘要：
A modified drain source current suitable for simulation program with integrated circuit emphasis(SPICE) simulations of SiC MESFETs is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint’s own model(TOM). The model,which is single piece and continuously differentiable,is verified by measured direct current(DC) I-V curves and scattering parameters(up to 20 GHz).
引用
收藏
页码：62 / 65
页数：4
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