Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions

被引：0
|
作者：
马晓菲 [1 ]
黄元琪 [1 ]
支钰崧 [1 ]
王霞 [1 ]
李培刚 [1 ]
吴真平 [1 ]
唐为华 [1 ]
机构：
[1] State Key Laboratory of Information Photonics and Optical Communications & School of Science,Beijing University of Posts and Telecommunications
来源：
Chinese Physics B | 2019年 / 28卷 / 08期
基金：
中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;
关键词：
Ga2O3; solar blind photodetector; heterojunction; self-powered;
D O I：
暂无
中图分类号：
TB383.2 [];
学科分类号：
070205 ; 080501 ; 1406 ;
摘要：
Heterojunctions composed of β-Ga2O3and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method. The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 105. Prominent solar-blind photoresponse effect is also observed in the formed heterojunction. The photodetector exhibits a self-powered behavior with a fast response speed(rise time and decay time are 0.035 s and 0.032 s respectively) at zero bias. The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.
引用
收藏
页码：407 / 411
页数：5
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