Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions

被引：0

作者：

马晓菲 ^{[1
]}

黄元琪 ^{[1
]}

支钰崧 ^{[1
]}

王霞 ^{[1
]}

李培刚 ^{[1
]}

吴真平 ^{[1
]}

唐为华 ^{[1
]}

机构：

[1] State Key Laboratory of Information Photonics and Optical Communications & School of Science,Beijing University of Posts and Telecommunications

来源：

Chinese Physics B | 2019年 / 28卷 / 08期

基金：

中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;

关键词：

Ga2O3; solar blind photodetector; heterojunction; self-powered;

D O I：

暂无

中图分类号：

TB383.2 [];

学科分类号：

070205 ; 080501 ; 1406 ;

摘要：

Heterojunctions composed of β-Ga2O3and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method. The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 105. Prominent solar-blind photoresponse effect is also observed in the formed heterojunction. The photodetector exhibits a self-powered behavior with a fast response speed(rise time and decay time are 0.035 s and 0.032 s respectively) at zero bias. The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.

引用

页码：407 / 411

页数：5

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