Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography

被引：0
|
作者：
乐艮 [1 ,2 ]
雷宇 [1 ,2 ]
迭俊珲 [1 ,2 ]
贾海强 [1 ,2 ]
陈弘 [1 ,2 ]
机构：
[1] Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
[2] School of Physics, University of Chinese Academy of Sciences
来源：
Chinese Physics Letters | 2018年 / 05期
关键词：
exp; Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography;
D O I：
暂无
中图分类号：
TN305.7 [光刻、掩膜];
学科分类号：
1401 ;
摘要：
We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.
引用
收藏
页码：65 / 68
页数：4
相关论文
共 50 条
  • [21] The radiation hardness properties of γ-ray for SOD circuits fabricated on 4-inch SOD wafer
    Gu, CZ
    Sun, Y
    Sun, Y
    Jin, ZS
    DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 405 - 407
  • [22] Fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by Laser Interference Lithography
    Cui, Lin
    Wang, Gui-Gen
    Zhang, Hua-Yu
    Han, Jie-Cai
    Kuang, Xu-Ping
    Tian, Ji-Li
    Sun, Rui
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 115 (01): : 159 - 165
  • [23] Fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by Laser Interference Lithography
    Lin Cui
    Gui-Gen Wang
    Hua-Yu Zhang
    Jie-Cai Han
    Xu-Ping Kuang
    Ji-Li Tian
    Rui Sun
    Applied Physics A, 2014, 115 : 159 - 165
  • [24] GROWTH AND FABRICATION OF HIGH-QUALITY 4-INCH LARGE LITAO3 SAW SUBSTRATE
    YAMADA, K
    OMI, T
    MATSUMURA, S
    NISHIMURA, T
    TOSHIBA REVIEW, 1985, (152): : 30 - 33
  • [25] Fabrication of nanosize patterned substrates using nano imprinting lithography
    Lee, H
    Hong, S
    Yang, G
    2005 3rd IEEE/EMBS Special Topic Conference on Microtechnology in Medicine and Biology, 2005, : 237 - 240
  • [26] Half 4-inch wafer-scale 2D MoS2 with high uniformity direct bandgap grown using ion beam sputtering and vulcanization
    Zeng, Gui-Sheng
    Chao, Yi-Nung
    Lee, Lin-Hsiang
    Chen, Sheng-Hui
    VACUUM, 2025, 233
  • [27] The Fabrication of Laser Array by Holographic Interference Lithography
    Chao, Chuli
    Ni, Chi-Yu
    Xuan, Rong
    Kuo, Hao-Chung
    2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, 2007, : 1928 - +
  • [28] Simulation and fabrication of nanostructures with laser interference lithography
    Yang, H. F.
    He, H. D.
    Zhao, E. L.
    Han, J.
    Hao, J. B.
    Qian, J. G.
    Tang, W.
    Zhu, H.
    LASER PHYSICS, 2014, 24 (06)
  • [29] The Fabrication of Nanostructures on Polydimethylsiloxane by Laser Interference Lithography
    Wu, Jun
    Geng, Zhaoxin
    Xie, Yiyang
    Fan, Zhiyuan
    Su, Yue
    Xu, Chen
    Chen, Hongda
    NANOMATERIALS, 2019, 9 (01)
  • [30] GROWTH AND FABRICATION OF HIGH-QUALITY 4-INCH LARGE LiTaO3 SAW SUBSTRATE.
    Yamada, Kazuhiro
    Omi, Tadao
    Matsumura, Sadao
    Nishimura, Toshio
    Toshiba review International ed., 1985, (152): : 30 - 33
12345