A new method to characterize the metallic-oxide films for grayscale lithography

被引:0
|
作者
孙立萍 [1 ]
张双根 [2 ]
王喆 [1 ]
邓家春 [1 ]
吕江 [1 ]
机构
[1] School of Science, Tianjin University of Technology
[2] Tianjin Key Laboratory of Film Electronic and Communication Device, Engineering Research Center of Communication Devices, Ministry of Education, Tianjin University of Technology
基金
中国国家自然科学基金;
关键词
LDW; A new method to characterize the metallic-oxide films for grayscale lithography; AFM;
D O I
暂无
中图分类号
TN305.7 [光刻、掩膜];
学科分类号
1401 ;
摘要
In order to characterize the metallic-oxide grayscale films fabricated by laser direct writing (LDW) in indium film, a new method with micro-Raman spectroscopy and atomic force microscope (AFM) is proposed. Raman spectra exhibit the characteristic band of In2O3 centered at 490 cm -1 , in which the intensities increase with the decreasing optical density of the In-In2O3 grayscale films. The mapping information of Raman spectra shows that the signal intensities of the film in the same grayscale area are uniform. Combining with the information of In-In2O3 grayscale film from AFM, the quantitative relationship between the concentration of In2O3 and the Raman signal intensity is shown. Compared with the conventional methods, the resolution of micro-Raman scattering method is appropriate, and the scanning speed is proper to analyze the structure of metallic-oxide grayscale films.
引用
收藏
页码:34 / 37
页数:4
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