Improvement of carrier distribution in dual wavelength light-emitting diodes

被引：0
|
作者：
司朝 [1 ]
魏同波 [1 ]
张宁 [1 ]
马骏 [1 ]
王军喜 [1 ]
李晋闽 [1 ]
机构：
[1] Research and Development Center for Semiconductor Lighting,Institute of Semiconductors,Chinese Academy of Sciences
来源：
Journal of Semiconductors | 2013年 / 05期
基金：
中国国家自然科学基金;
关键词：
LED; dual wavelength; quantum barrier; holes injection; carrier distribution;
D O I：
暂无
中图分类号：
TN312.8 [];
学科分类号：
0803 ;
摘要：
The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied.Compared with a traditional sample,electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level,and the bottom quantum-wells light emitting is enhanced.All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs.
引用
收藏
页码：87 / 89
页数：3
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