Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells

被引：6

作者：

Si, Zhao ^{[1
]}

Wei, Tongbo ^{[1
]}

Yan, Jianchang ^{[1
]}

Ma, Jun ^{[1
]}

Zhang, Ning ^{[1
]}

Liu, Zhe ^{[1
]}

Wei, Xuecheng ^{[1
]}

Wang, Xiaodong ^{[1
]}

Lu, Hongxi ^{[1
]}

Wang, Junxi ^{[1
]}

Li, Jinmin ^{[1
]}

机构：

[1] Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 03期

基金：

国家高技术研究发展计划(863计划);

关键词：

III-nitride semiconductors; charge-carrier distribution; electroluminescence; light-emitting diodes; EFFICIENCY-DROOP;

D O I：

10.1002/pssa.201228777

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study on the effect of Mg doping in quantum-well (QW) layers on dual-wavelength light-emitting diodes (LEDs) was performed. A series of dual-wavelength LEDs with different Mg doping conditions were fabricated. According to electroluminescence measurement, as the Mg doping concentration and regions varied, improved hole distribution and bottom-QW emission was achieved. This result is in accord with APSYS simulation. In addition, the sample with Mg doping in all QWs showed the highest output power and smallest efficiency droop. It is concluded that Mg doping in QWs could ameliorate the optical and electrical properties of dual-wavelength LEDs.

引用

页码：559 / 562

页数：4

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