Microstructures of InN film on 4H-SiC(0001) substrate grown by RF-MBE

InN film was grown on 4H-SiC(0001) substrate by RF plasma-assisted molecular beam epitaxy(RFMBE).Priorto the growth of InN film,an InN buffer layer with a thickness of5.5 nm was grown on the substrate.Surface morphology,microstructure and structural quality of InN film were investigated.Micro-structural defects,such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy(TEM).The results show that a high density of line contrasts,parallel to the growth direction(c-axis),was clearly observed in the grown InN film.Dark field TEM images recorded with diffraction vectors g =1120and g — 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface.This InN nucleation also led to a generation of anti-phase domains.