PDSOI DTMOS for analog and RF application

Based on the platform of 0.35μm PDSOI CMOS process technology,the partially depleted siliconon -insulator dynamic threshold voltage（PDSOI DT） NMOS with an H-gate was implemented.The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H-gate NMOS and conventional H-gate NMOS were performed and compared.Furthermore,the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail.The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as V;= 0.7 V and V;= 1V.