A laterally graded junctionless transistor

被引：0

作者：

Punyasloka Bal ^{[1
]}

Bahniman Ghosh ^{[1
,2
]}

Partha Mondal ^{[1
]}

M.W.Akram ^{[1
]}

机构：

[1] Department of Electrical Engineering, Indian Institute of Technology Kanpur

[2] Microelectronics Research Center, 10100 Burnet Road, University of Texas at Austin

来源：

Journal of Semiconductors | 2014年 / 03期

关键词：

junctionless field effect transistor; laterally graded; subthreshold slope;

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

This paper proposes a laterally graded junctionless transistor taking peak doping concentration near the source and drain region, and a gradual decrease in doping concentration towards the center of the channel to improve the I OFF and I ON/I OFF ratio. The decrease of doping concentration in the lateral direction of the channel region depletes a greater number of charge carriers compared to the uniformly doped channel in the OFF-state,which in turn suppresses the OFF state current flowing through the device without greatly affecting the ON state current.

引用

页码：33 / 36

页数：4

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