First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO

被引:0
|
作者
黄贵洋 [1 ]
王崇愚 [1 ]
王建涛 [2 ]
机构
[1] Department of Physics,Tsinghua University
[2] Institute of Physics,Chinese Academy of Sciences
关键词
semiconductor; surface diffusion; first-principles calculation;
D O I
暂无
中图分类号
O474 [杂质和缺陷];
学科分类号
070205 ; 080501 ; 0809 ; 080903 ;
摘要
A detailed first-principles study of the diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO was performed. The O vacancy and interstitial are found to diffuse much more easily in surface than in bulk. The Zn vacancy has a similar migration barrier for both bulk and surface, but has much smaller barrier for the diffuse-in process. The Zn interstitial is difficult to diffuse in the surface directly, but it can diffuse into the bulk relatively easily. Specific values of corresponding migration barriers are obtained.
引用
收藏
页码:257 / 261
页数:5
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