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First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO
被引:0
|作者:
黄贵洋
[1
]
王崇愚
[1
]
王建涛
[2
]
机构:
[1] Department of Physics,Tsinghua University
[2] Institute of Physics,Chinese Academy of Sciences
来源:
关键词:
semiconductor;
surface diffusion;
first-principles calculation;
D O I:
暂无
中图分类号:
O474 [杂质和缺陷];
学科分类号:
070205 ;
080501 ;
0809 ;
080903 ;
摘要:
A detailed first-principles study of the diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO was performed. The O vacancy and interstitial are found to diffuse much more easily in surface than in bulk. The Zn vacancy has a similar migration barrier for both bulk and surface, but has much smaller barrier for the diffuse-in process. The Zn interstitial is difficult to diffuse in the surface directly, but it can diffuse into the bulk relatively easily. Specific values of corresponding migration barriers are obtained.
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页码:257 / 261
页数:5
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