First-principles study of point defects at a semicoherent interface

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作者
E. Metsanurk
A. Tamm
A. Caro
A. Aabloo
M. Klintenberg
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[1] Uppsala University,Department of Physics and Astronomy
[2] Intelligent Materials and Systems Laboratory,undefined
[3] Institute of Technology,undefined
[4] University of Tartu,undefined
[5] Los Alamos National Laboratory,undefined
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Most of the atomistic modeling of semicoherent metal-metal interfaces has so far been based on the use of semiempirical interatomic potentials. We show that key conclusions drawn from previous studies are in contradiction with more precise ab-initio calculations. In particular we find that single point defects do not delocalize, but remain compact near the interfacial plane in Cu-Nb multilayers. We give a simple qualitative explanation for this difference on the basis of the well known limited transferability of empirical potentials.
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