Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack

被引：0

作者：

韩锴 ^{[1
]}

王晓磊 ^{[2
]}

徐永贵 ^{[1
]}

杨红 ^{[2
]}

王文武 ^{[2
]}

机构：

[1] Department of Physics and Electronic Science, Weifang University

[2] Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

来源：

Chinese Physics B | 2014年 / 23卷 / 11期

关键词：

metal gate; high-k dielectric; band alignment; Vfbshift;

D O I：

暂无

中图分类号：

O481.1 [能带论];

学科分类号：

070205 ; 0805 ; 080502 ; 0809 ;

摘要：

A theoretical model of flatband voltage(VFB) of metal/high-k/SiO2/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFBis obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFBof TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results.Furthermore, both positive VFBshift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.

引用

页码：540 / 544

页数：5

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