Preparation of CoP films by ultrasonic electroless deposition at low initial temperature

被引:0
|
作者
Yundan Yu [1 ,2 ]
Zhenlun Song [1 ]
Hongliang Ge [2 ]
Guoying Wei [2 ]
机构
[1] Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
[2] College of Materials Science and Engineering, China Jiliang University
基金
中国国家自然科学基金;
关键词
Ultrasonic; Electroless deposition; Magnetic thin films; CoP films;
D O I
暂无
中图分类号
O484.1 [薄膜的生长、结构和外延];
学科分类号
080501 ; 1406 ;
摘要
Electroless deposition technology has been considered as a kind of common ways to obtain cobalt alloy films. However, in order to get cobalt alloy films, high temperature(353 K) is necessary during the electroless deposition process which will increase costs and energy consumption. Ultrasonic was introduced during electroless plating process to obtain cobalt alloy films at lower initial temperature. It was found that the cobalt thin films could be prepared at lower initial temperature(323 K) with the introduction of ultrasonic. Therefore, different powers of ultrasonic were applied during the electroless deposition process to prepare CoP thin films on copper substrates from an alkaline bath in this investigation. The effects of different powers of ultrasonic on deposition rate, surface morphology, anticorrosion performance and magnetic property of films were studied. It was found that the deposition rate increased gradually with the rise in ultrasonic powers due to cavitation phenomenon. All the CoP films presented the typical spherical nodular structures with the impact of ultrasonic. Smaller and regular shaped structures could be observed when the films were deposited with higher power of ultrasonic which contributed directly to enhancement of anticorrosion performance. Saturation magnetization and coercivity of thin films increased gradually with the rise in ultrasonic powers during the electroless deposition process due to the higher amounts of cobalt.& 2014 Chinese Materials Research Society. Production and hosting by Elsevier B.V. All rights reserved.
引用
收藏
页码:232 / 238
页数:7
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