Enhancing reliability in oxide-based memristors using two-dimensional transition metal dichalcogenides

Oxide-based memristor is an attractive candidate for future nonvolatile resistive random access memory (RRAM) devices. However, it suffers from insufficient reliability, owing to the randomness of the conductive filaments, hindering the practical use of the memristor for future RRAM applications. Here, we propose harnessing the twodimensional (2D) transition metal dichalcogenides (TMDs) on oxide memristor to achieve high device reliability by controlling oxygen vacancy-based filaments near the TMDs/oxide interface. By forming the Pt/WSe2/ HfxZr1-xO2 (HZO)/TiN structure, the fabricated memristor exhibits high reliability with good cyclic endurance (over 2,000 cycles), retention (104 s), and low cycle-to-cycle variability. Surface chemical analysis reveals the abundant oxygen vacancies induced by forming WSe2/HZO interface are the source of filamentary switching. By incorporating 2D materials and oxides, the practical application of memristor to future information processing devices can be boosted by the enhanced device reliability.