Multistates and Ultralow-Power Ferroelectric Tunnel Junction by Inserting Al2O3 Interlayer

被引：2
|
作者：
Zhang, Yefan [1 ]
Yu, Shihao [1 ]
Yang, Peng [1 ]
Luo, Xiaopeng [1 ]
Xu, Hui [1 ]
Wang, Xi [1 ]
Liu, Haijun [1 ]
Liu, Sen [1 ]
Li, Qingjiang [1 ]
机构：
[1] Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2025年 / 72卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Films; Zirconium; Tin; Power demand; Tunneling; Electrons; Electrodes; Switches; Microscopy; Hafnium oxide; Hf0.5Zr0.5O2(HZO); multistates; Al2O3; interlayer; ferroelectric tunnel junction (FTJ); ultralow computational power consumption;
D O I：
10.1109/TED.2024.3503533
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, we have designed an optimized ferroelectric tunnel junction (FTJ) device structure that inserts 3-nm Al2O3 between Hf0.5Zr0.5O2 (HZO) films. The Al2O3 interlayer can block the longitudinal growth of HZO grains and increase the number of ferroelectric domains. Therefore, the FTJ devices with Al2O3 interlayer demonstrate amazing multilevel states (256) and ultralow computational power consumption (76.1 pW/bit). In addition, the proposed FTJ device shows high linearity (alpha(p) = - 1.262), wide modulation capability, and good reproducibility. The results indicate that the device has high potential in energy-efficient brain-like computing application.
引用
收藏
页码：228 / 233
页数：6
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