Preparation of Al2O3 tunnel barrier layer in atome-level controlled Josephson junction

被引：0

作者：

Li Zhong-Xiang ^{[1
,3
]}

Wang Shu-Ya ^{[2
]}

Huang Zi-Qiang ^{[4
,5
]}

Wang Chen ^{[4
,5
]}

Mu Qing ^{[2
]}

机构：

[1] Zhengzhou Univ, Natl Supercomp Ctr Zhengzhou, Zhengzhou 450001, Peoples R China

[2] State Key Lab Math Engn & Adv Comp, Zhengzhou 450001, Peoples R China

[3] Zhengzhou Univ, Sch Comp & Artificial Intelligence, Zhengzhou 450001, Peoples R China

[4] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China

[5] Mfg Innovat Ctr Co Ltd, Shanghai 200433, Peoples R China

来源：

ACTA PHYSICA SINICA | 2022年 / 71卷 / 21期

关键词：

atomic layer deposition; Al2O3 tunnel barrier; Josephson junction; room temperature resistance; DEPOSITION;

D O I：

10.7498/aps.71.20220820

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The AlOX tunnel barrier in Josephson junctions prepared by conventional thermal oxidation method is formed by diffusing high-purity oxygen into the surface of Al. But the tunnel barrier fabricated by this method is not completely oxidized, and the thickness of barrier is hard to control accurately. In this work, we use atomic layer deposition to grow Al2O3 tunnel barrier on the surface of Ti. The sandwich structure of Ti/Al2O3/Ti Josephson junction is grown layer by layer. We investigate the corresponding microstructure and electrical properties by adjusting the thickness of the Al2O3 tunnel barrier and the area of the junction. The experimental results show that the monolayer Al2O3 film is about 1.17 angstrom (1 angstrom = 10(-10) m), which is grown by atomic layer deposition, achieves atomic-level controlled thickness. The resistance is controlled by adjusting the barrier thickness at room temperature. And we obtain a Josephson junction with good resistance uniformity at room temperature by optimizing the junction area.

引用

页数：6

共 20 条

[1] Superconductor integrated, circuit fabrication technology
Abelson, LA
Kerber, GL
[J]. PROCEEDINGS OF THE IEEE, 2004, 92 (10) : 1517 - 1533
[2] TUNNELING BETWEEN SUPERCONDUCTORS
AMBEGAOKAR, V
BARATOFF, A
[J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 486 - &
[3] Temperature and pressure dependent Mott potentials and their influence on self-limiting oxide film growth
Cai, Na
Zhou, Guangwen
Mueller, Kathrin
Starr, David E.
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (17)
[4] EXPERIMENTAL OBSERVATION OF PAIR-QUASIPARTICLE POTENTIAL DIFFERENCE IN NONEQUILIBRIUM SUPERCONDUCTORS
CLARKE, J
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1363 - &
[5] New generation of reactive pre-clean prior to barrier-seed deposition to preserve ULK integrity
Delavant, M.
Guillan, J.
Galpin, D.
Chhun, S.
Juhel, M.
Guiheux, D.
Jian, P.
Ha, T. H.
Forster, J.
Guggilla, S.
Hong, S.
Bozon, B.
[J]. MICROELECTRONIC ENGINEERING, 2012, 92 : 38 - 41
[6] SURFACE-CHEMISTRY OF AL2O3 DEPOSITION USING AL(CH3)(3) AND H2O IN A BINARY REACTION SEQUENCE
DILLON, AC
OTT, AW
WAY, JD
GEORGE, SM
[J]. SURFACE SCIENCE, 1995, 322 (1-3) : 230 - 242
[7] Surface chemistry for atomic layer growth
George, SM
Ott, AW
Klaus, JW
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (31): : 13121 - 13131
[8] Atomic Layer Deposition: An Overview
George, Steven M.
[J]. CHEMICAL REVIEWS, 2010, 110 (01) : 111 - 131
[9] Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
Groner, MD
Elam, JW
Fabreguette, FH
George, SM
[J]. THIN SOLID FILMS, 2002, 413 (1-2) : 186 - 197
[10] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS
GURVITCH, M
WASHINGTON, MA
HUGGINS, HA
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 472 - 474

← 1 2 →