Synthesis and property enhancement of Ti-Si/SiC composites by reactive infiltration for semiconductor applications

被引：1
|
作者：
Zhao, Ziyan [1 ,2 ]
Liu, Yan [1 ,2 ]
Zhou, Bo [1 ,2 ]
Zhang, Keying [1 ,2 ]
Liu, Xuejian [1 ,2 ]
Huang, Zhengren [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine M, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2024年 / 50卷 / 22期
关键词：
Ti-Si/SiC composites; Reactive infiltration; Formation mechanism; Properties characterization; BONDED SILICON-CARBIDE; CERAMIC-MATRIX COMPOSITES; CARBON; FABRICATION; ALLOYS;
D O I：
10.1016/j.ceramint.2024.08.423
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Poor machinability and limited electrical conductivity present significant challenges for silicon carbide (SiC) composites used in the semiconductor industry. In this study, Ti-Si/SiC composites were synthesized by liquid infiltration of a Ti-Si eutectic alloy, using SiC and Carbon black as raw materials. The reactive sintering mechanism and properties of Ti-Si/SiC composites were investigated using the reactive infiltration sintering process. The relative density of Ti-Si/SiC composites reached 98.43 % at 1600 degrees C. The results indicate that continuous infiltration of the Ti-Si eutectic alloy and dissolution-reprecipitation are critical for synthesizing Ti-Si/SiC composites. The coefficient of thermal expansion for the composites is 5.16 x 10-6 degrees C- 1. Remarkably, the exponential increase in electrical conductivity with rising temperature strongly supports the enhanced conductive properties of this composite semiconductor. The Ti-Si/SiC composites exhibit maximum flexural strength, indentation modulus, and hardness values of 310.4 MPa, 434.1 GPa, and 29.4 GPa, respectively. This research aims to advance the application of high-performance Ti-Si/SiC materials in semiconductor technology.
引用
收藏
页码：45833 / 45842
页数：10
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