Synthesis and property enhancement of Ti-Si/SiC composites by reactive infiltration for semiconductor applications

Poor machinability and limited electrical conductivity present significant challenges for silicon carbide (SiC) composites used in the semiconductor industry. In this study, Ti-Si/SiC composites were synthesized by liquid infiltration of a Ti-Si eutectic alloy, using SiC and Carbon black as raw materials. The reactive sintering mechanism and properties of Ti-Si/SiC composites were investigated using the reactive infiltration sintering process. The relative density of Ti-Si/SiC composites reached 98.43 % at 1600 degrees C. The results indicate that continuous infiltration of the Ti-Si eutectic alloy and dissolution-reprecipitation are critical for synthesizing Ti-Si/SiC composites. The coefficient of thermal expansion for the composites is 5.16 x 10-6 degrees C- 1. Remarkably, the exponential increase in electrical conductivity with rising temperature strongly supports the enhanced conductive properties of this composite semiconductor. The Ti-Si/SiC composites exhibit maximum flexural strength, indentation modulus, and hardness values of 310.4 MPa, 434.1 GPa, and 29.4 GPa, respectively. This research aims to advance the application of high-performance Ti-Si/SiC materials in semiconductor technology.