A PNP-Based Temperature Sensor With Continuous-Time Readout and ±0.1 °C (3σ) Inaccuracy From-55 °C to 125 °C

被引:0
|
作者
Toth, Nandor G. [1 ]
Tang, Zhong [1 ,2 ]
Someya, Teruki [1 ,3 ]
Pan, Sining [1 ,4 ]
Makinwa, Kofi A. A. [1 ]
机构
[1] Delft Univ Technol, Fac Elect Engn, Microelect Dept, Elect Instrumentat Lab, NL-2628 CD Delft, Netherlands
[2] Vango Technol Inc, Hangzhou 310053, Peoples R China
[3] SiTime Japan, Tokyo 1080075, Japan
[4] Tsinghua Univ, Sch Integrated Circuits, Beijing 100084, Peoples R China
关键词
Temperature sensors; Resistors; Energy efficiency; Instruments; Temperature dependence; Modulation; Energy resolution; Bitstream-controlled (BSC) dynamic-element-matching (DEM); continuous-time (CT) Delta Sigma-modulator; current-mode readout; PNP-based temperature sensor; resistor ratio self-calibration; -55-DEGREES-C;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article describes a PNP-based temperature sensor that achieves both high energy efficiency and accuracy. Two resistors convert the CTAT and PTAT voltages generated by a PNP-based front-end into two currents whose ratio is then digitized by a continuous-time (CT) Delta Sigma -modulator. Chopping and dynamic-element-matching (DEM) are used to mitigate the effects of component mismatch and 1/f noise, while the spread in VBE and in the ratio of the two resistors is digitally trimmed at room temperature (RT). Fabricated in a 0.18 mu m CMOS process, the sensor occupies 0.12 mm2, and draws 9.5 mu A from a supply voltage ranging from 1.7 to 2.2 V. Measurements on 40 samples from one batch show that it achieves an inaccuracy of +/- 0.1 degrees C ( 3 sigma ) from -55 degrees C to 125 degrees C, and a commensurate supply sensitivity of only 0.01 degrees C/V. Furthermore, it achieves high energy efficiency, with a resolution Figure of Merit (FoM) of 0.85 pJ center dot K-2.
引用
收藏
页码:593 / 602
页数:10
相关论文
共 50 条
  • [41] A ±0.15 °C (3σ) Inaccuracy CMOS Smart Temperature Sensor from 40 °C to 125 °C with a 10 ms Conversion Time-Leveraging an Adaptative Decimation Filter in 65 nm CMOS Technology
    Passos, Fabio
    Santos, Gabriel
    dos Santos, Marcelino Bicho
    ELECTRONICS, 2024, 13 (14)
  • [42] A 9 μW Micropower Temperature Sensor with an Inaccuracy of +/-0.4 °C from-40 °C to 120 °C
    Wang, Yong
    Wang, Xiao
    Zhang, Jianyun
    Zhao, Yuhang
    Zhang, David Wei
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2014, 6 (10) : 898 - 903
  • [43] A CMOS-Thyristor Based Temperature Sensor with+0.37 °C/-0.32 °C Inaccuracy
    Li, Jing
    Lin, Yuyu
    Ye, Siyuan
    Wu, Kejun
    Ning, Ning
    Yu, Qi
    MICROMACHINES, 2020, 11 (02)
  • [44] An Energy-Efficient BJT-Based Temperature Sensor with ±0.8 °C (3σ) Inaccuracy from-50 to 150 °C
    Qin, Chuyun
    Huang, Zhenyan
    Liu, Yuyan
    Li, Jiping
    Lin, Ling
    Tan, Nianxiong
    Yu, Xiaopeng
    SENSORS, 2022, 22 (23)
  • [45] A 0.85V 600nW All-CMOS Temperature Sensor with an Inaccuracy of ±0.4°C (3σ) from-40 to 125°C
    Souri, Kamran
    Chae, Youngcheol
    Thus, Frank
    Makinwa, Kofi
    2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC), 2014, 57 : 222 - +
  • [46] A Close-loop Time-mode Temperature Sensor with Inaccuracy of-0.6 °C/0.5 °C from-40 °C to 120 °C
    Zhu, Di
    Wang, Jiacheng
    Siek, Liter
    2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2016, : 942 - 945
  • [47] A Low-Power Self-Calibration Digital-Output CMOS Temperature Sensor with ± 0.1°C Inaccuracy from-40°C to 85°C
    Niu, Yuze
    Lu, Wengao
    Zhang, Yacong
    Yu, Shanzhe
    Chen, Zhongjian
    2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2017, : 1005 - 1008
  • [48] A fully passive RFID temperature sensor SoC with an accuracy of ±0.4 °c (3σ) from 0 °c to 125 °c
    Tan J.
    Sathyamurthy M.
    Rolapp A.
    Gamez J.
    Hennig E.
    Schafer E.
    Sommer R.
    IEEE Journal of Radio Frequency Identification, 2019, 3 (01): : 35 - 45
  • [49] A low-power native NMOS-based bandgap reference operating from-55°C to 125°C with Li-Ion battery compatibility
    Caselli, Michele
    van Liempd, Chris
    Boni, Andrea
    Stanzione, Stefano
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2021, 49 (05) : 1327 - 1346
  • [50] An Energy-Efficient BJT-Based Temperature-to-Digital Converter with ±0.13 °C (3σ) Inaccuracy from-40 to 125°C
    Kumar, Rushil K.
    Jiang, Hui
    Makinwa, Kofi A. A.
    2019 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2019, : 107 - 108