A PNP-Based Temperature Sensor With Continuous-Time Readout and ±0.1 °C (3σ) Inaccuracy From-55 °C to 125 °C

被引:0
|
作者
Toth, Nandor G. [1 ]
Tang, Zhong [1 ,2 ]
Someya, Teruki [1 ,3 ]
Pan, Sining [1 ,4 ]
Makinwa, Kofi A. A. [1 ]
机构
[1] Delft Univ Technol, Fac Elect Engn, Microelect Dept, Elect Instrumentat Lab, NL-2628 CD Delft, Netherlands
[2] Vango Technol Inc, Hangzhou 310053, Peoples R China
[3] SiTime Japan, Tokyo 1080075, Japan
[4] Tsinghua Univ, Sch Integrated Circuits, Beijing 100084, Peoples R China
关键词
Temperature sensors; Resistors; Energy efficiency; Instruments; Temperature dependence; Modulation; Energy resolution; Bitstream-controlled (BSC) dynamic-element-matching (DEM); continuous-time (CT) Delta Sigma-modulator; current-mode readout; PNP-based temperature sensor; resistor ratio self-calibration; -55-DEGREES-C;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article describes a PNP-based temperature sensor that achieves both high energy efficiency and accuracy. Two resistors convert the CTAT and PTAT voltages generated by a PNP-based front-end into two currents whose ratio is then digitized by a continuous-time (CT) Delta Sigma -modulator. Chopping and dynamic-element-matching (DEM) are used to mitigate the effects of component mismatch and 1/f noise, while the spread in VBE and in the ratio of the two resistors is digitally trimmed at room temperature (RT). Fabricated in a 0.18 mu m CMOS process, the sensor occupies 0.12 mm2, and draws 9.5 mu A from a supply voltage ranging from 1.7 to 2.2 V. Measurements on 40 samples from one batch show that it achieves an inaccuracy of +/- 0.1 degrees C ( 3 sigma ) from -55 degrees C to 125 degrees C, and a commensurate supply sensitivity of only 0.01 degrees C/V. Furthermore, it achieves high energy efficiency, with a resolution Figure of Merit (FoM) of 0.85 pJ center dot K-2.
引用
收藏
页码:593 / 602
页数:10
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