Spectroscopy of Erbium-doped LiYF4 crystalline layers grown by Liquid Phase Epitaxy

被引：0
|
作者：
Normani, Simone [1 ]
Loiko, Pavel [1 ]
Basyrova, Liza [1 ]
Brasse, Gurvan [1 ]
Benayad, Abdelmjid [1 ]
Braud, Alain [1 ]
Camy, Patrice [1 ]
机构：
[1] Univ Caen Normandie, UMR CEA CNRS ENSICAEN 6252, Ctr Rech Ions Mat & Photon CIMAP, 6 Blvd Marechal Juin, F-14050 Caen 4, France
来源：
FIBER LASERS AND GLASS PHOTONICS: MATERIALS THROUGH APPLICATIONS IV | 2024年 / 13003卷
关键词：
Liquid Phase Epitaxy; fluorides; erbium ions; luminescence; mid-infrared; CHANNEL WAVE-GUIDE; MICROCHIP LASERS; SLOPE EFFICIENCY; LU;
D O I：
10.1117/12.3016453
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on a detailed spectroscopic study of heavily Er3+-doped LiYF4 epitaxial layers with the goal of developing mid-infrared waveguide lasers. Layers with a doping level up to 11 at.% Er3+ were grown on (001) oriented undoped bulk LiYF4 substrates using LiF as a solvent. The absorption spectrum of Er3+ ions was measured. Under excitation at 973 nm, the layers exhibited intense and strongly polarized mid-infrared luminescence spanning from 2.65 to 2.90 mu m related to the I-4(11/2) -> I-4(13/2) Er3+ transition. The peak stimulated-emission cross-section at the expected laser wavelength was calculated to be 0.88x10(-20) cm(2) at 2809 nm for pi-polarization. By means of low-temperature (12 K) spectroscopy, the experimental crystal-field splitting of Er3+ multiplets was determined. The luminescence dynamics from Er3+ excited states were studied. For the 11 at.% Er3+ doping, the luminescence lifetimes of the I-4(13/2) and I-4(11/2) manifolds amounted to 5.54 ms and 2.66 ms, respectively.
引用
收藏
页数：7
相关论文
共 50 条
  • [41] STRUCTURE OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY
    GROBE, E
    SALOW, H
    ZEITSCHRIFT FUR ANGEWANDTE PHYSIK, 1972, 32 (5-6): : 381 - &
  • [42] Nd3+-doped fluoride film grown on LiYF4 substrate by pulsed laser deposition
    Barsanti, S.
    Comacchia, F.
    Di Lieto, A.
    Toncelli, A.
    Tonelli, M.
    Bicchi, P.
    THIN SOLID FILMS, 2008, 516 (08) : 2009 - 2013
  • [43] Boron doping of silicon layers grown by liquid phase epitaxy
    McCann, MJ
    Weber, KJ
    Petravic, M
    Blakers, AW
    JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) : 45 - 50
  • [44] ELECTRONIC RAMAN-SPECTROSCOPY OF RARE-EARTH DOPED YTTRIUM ALUMINUM GARNET LAYERS GROWN BY LIQUID-PHASE EPITAXY
    VANDENBOOM, H
    BREEMER, RE
    ROBERTSON, JM
    APPLIED SPECTROSCOPY, 1980, 34 (06) : 622 - 624
  • [45] MOSSBAUER-SPECTROSCOPY OF SN-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
    WILLIAMSON, DL
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3466 - 3472
  • [46] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY
    ENNEN, H
    POMRENKE, G
    AXMANN, A
    EISELE, K
    HAYDL, W
    SCHNEIDER, J
    APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383
  • [47] Optical response and surface morphology of crystalline Nd3+-doped fluoride films grown on monocrystalline LiYF4 substrates by pulsed laser deposition
    Barsanti, S.
    Anwar-ul-Haq, M.
    Bicchi, R.
    THIN SOLID FILMS, 2009, 517 (06) : 2029 - 2034
  • [48] Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy
    Kuznetsov, N
    Tsagaraki, K
    Bauman, D
    Morozov, A
    Nikitina, I
    Ivantsov, V
    Zekentes, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 345 - 347
  • [49] Ordered versus disordered InGaP layers grown by liquid phase epitaxy
    Prutskij, TA
    Arencibia, PD
    Mintairov, A
    Merz, J
    Kosel, TH
    MODERN PHYSICS LETTERS B, 2001, 15 (17-19): : 651 - 654
  • [50] Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy
    Donchev, V.
    Milanova, M.
    Asenova, I.
    Shtinkov, N.
    Alonso-Alvarez, D.
    Mellor, A.
    Karmakov, Y.
    Georgiev, S.
    Ekins-Daukes, N.
    JOURNAL OF CRYSTAL GROWTH, 2018, 483 : 140 - 146
12345