A 2-6 GHz Driver Amplifier with 27 dBm Output Power and 35 dB Gain

被引：0
|
作者：
Cagdas, Engin [1 ]
Kizilbey, Oguzhan [2 ]
Yazgi, Metin [1 ]
机构：
[1] Istanbul Tech Univ, Elekt & Haberlesme Muhendisligi, Istanbul, Turkiye
[2] Tubitak Ulusal Metrol Enstitusu, Kocaeli, Turkiye
来源：
32ND IEEE SIGNAL PROCESSING AND COMMUNICATIONS APPLICATIONS CONFERENCE, SIU 2024 | 2024年
关键词：
GaN (HEMT); power amplifier; driver amplifier;
D O I：
10.1109/SIU61531.2024.10600910
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, a wideband driver amplifier (DA) with flat gain is presented for driver stage in high power amplifier. The presented driver amplifier consists of 11 dB gain block, positive slope equalizer and power amplifier stage with 24 dB small signal gain. The designed DA has 500 mW (27 dBm) output power and operates along 2-6 GHz frequency band. This DA is designed to be implemented on the Rogers RT5870 dielectric substrate. MiniCircuit Lee29+ transistor and GaN based Qorvo TGA2597 MMIC are used in the design. The performance of the designed DA was evaluated by making small signal simulations. After simulations the circuit was realized and measured. The DA offers a small signal gain of 35 dB over the frequency band of 2-6 GHz.
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页数：4
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