High power high efficiency single emitter laser diode with high reliability operation

被引：0

作者：

Morohashi, R. ^{[1
]}

Uchiyama, M. ^{[1
]}

Kawakami, T. ^{[2
]}

Yamagata, Y. ^{[1
]}

Terada, Y. ^{[1
]}

机构：

[1] Fujikura Ltd, Opt Technol R&D Ctr, 1440 Mutsuzaki, Sakura, Chiba 2858550, Japan

[2] Fujikura Ltd, Fiber Laser Div, 1440 Mutsuzaki, Sakura, Chiba 2858550, Japan

来源：

2024 IEEE 29TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, ISLC 2024 | 2024年

关键词：

semiconductor laser; high power; waveguide structure; high efficiency;

D O I：

10.1109/ISLC57752.2024.10717339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To maximize output with low vertical divergence of single emitter laser diodes, epitaxial structures were designed and fabricated with two types of waveguide structures. At a driving current of 27 A under room temperature, high power of 27.9 W and high efficiency of 66.5% was achieved. The vertical far-field divergence angle with 95% power intensity of 47 degrees was obtained. The aging test with temperature acceleration passed 3,500 hours without failure.

引用

页数：2

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