808 nm Single Emitter High Power Laser with 13.6 W

被引:1
|
作者
Li Peixu [1 ]
Yin Fangjun [1 ]
Zhang Chengshan [1 ]
Kai Beichao [1 ]
Sun Sujuan [1 ]
Jiang Jianmin [1 ]
Xia Wei [1 ,3 ]
Xu Xiangang [1 ,2 ]
机构
[1] Shandong Huaguang Optoelect Co Ltd, Jinan 250101, Shandong, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China
[3] Univ Jinan, Sch Phys & Technol, Jinan 250022, Shandong, Peoples R China
来源
关键词
lasers; catastrophic optical damage; facet coating; TiO2; wavelength of 808 nm;
D O I
10.3788/CJL201845.0101013
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The catastrophic optical damage of the high power laser is studied, and the damage mechanism of the laser facet coating is analyzed. In order to increase the output power of the laser, the TiO2 is used to replace the Si as the high refractive index materials, the nonstandard film is set up to reduce the intensity of electric field. Meanwhile, the roughness of the film materials is optimized, and the ion source is used to clean and flux. The threshold of the catastrophic optical damage is effectively improved. The results show that the proposed laser has a maximum continuous output power of 13.6 W.
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收藏
页数:4
相关论文
共 9 条
  • [1] Frequency-narrowed external-cavity diode-laser-array bar
    Chann, B
    Nelson, I
    Walker, TG
    [J]. OPTICS LETTERS, 2000, 25 (18) : 1352 - 1354
  • [2] High-brightness wavelength beam combined semiconductor laser diode arrays
    Huang, Robin K.
    Chann, Bien
    Missaggia, Leo J.
    Donnelly, Joseph P.
    Harris, Christopher T.
    Turner, George W.
    Goyal, Anish K.
    Fan, Tso Yee
    Sanchez-Rubio, Antonio
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (2-4) : 209 - 211
  • [3] Liu Y, 2002, APPL PHYS LETT, V81, P978
  • [4] Development of high-power laser coatings
    Qi, Hongji
    Zhu, Meipin
    Fang, Ming
    Shao, Shuying
    Wei, Chaoyang
    Yi, Kui
    Shao, Jianda
    [J]. HIGH POWER LASER SCIENCE AND ENGINEERING, 2013, 1 (01) : 36 - 43
  • [5] High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm
    Qu, Y
    Yuan, S
    Liu, CY
    Bo, BX
    Liu, GJ
    Jiang, HL
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (02) : 389 - 391
  • [6] Tao Ge-tao, 2007, Semiconductor Optoelectronics, V28, P778
  • [7] [王立军 Wang Lijun], 2015, [发光学报, Chinese Journal of Luminescence], V36, P1
  • [8] YANSON D, 2011, SPIE, V7918
  • [9] [张金胜 Zhang Jinsheng], 2014, [中国激光, Chinese Journal of Lasers], V41, P0107001