253 GHz fT Graded-Channel AlGaN/GaN High-Electron-Mobility Transistors with New Cliff Barrier for Millimeter Wave High-Frequency Applications

被引：0
|
作者：
Franklin, S. Angen [1 ]
Jebalin, I. V. Binola K. [2 ]
Chander, Subhash [3 ]
Rani, Sylvia Juliet [1 ]
Nirmal, D. [1 ]
机构：
[1] Karunya Inst Technol & Sci, Dept Elect & Commun Engn, Coimbatore 641114, India
[2] Karunya Inst Technol & Sci, Dept Biomed Engn, Coimbatore 641114, India
[3] Solid State Phys Lab DRDO, Lucknow Rd, Timarpur 110054, Delhi, India
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2024年
关键词：
cliff barrier; high-electron-mobility transistor; power-added efficiency; process steps; radio frequency; LAYER THICKNESS; GAN; GATE; PERFORMANCE; IMPACT; HEMTS; RF;
D O I：
10.1002/pssa.202400552
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this research work, a graded-channel AlGaN/GaN high-electron-mobility transistor (HEMT) featuring a cliff AlGaN barrier with a gate length of 60 nm is investigated. The inclusion of a foot cliff barrier layer confines the 3DEG distribution, thereby reducing electron scattering and potentially improving carrier mobility. The cliff-graded-channel device shows a peak cutoff frequency fT of 253 GHz and power-added efficiency of 68% at 30 GHz, which represents a significant 60% improvement in comparison with conventional graded-channel devices. These results clearly indicate that the graded-channel AlGaN/GaN HEMT with a new cliff barrier design has great potential for mmW applications.
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页数：6
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