Effect of annealing temperature on the dosimetric properties of thermoluminescence in a TiO2: Cu multilayer film under gamma-ray exposure

This study aims to develop a thermoluminescence (TL) dosimetry device utilizing a TiO2: Cu multilayer film, which is fabricated using RF/DC sputtering and subjected to various annealing temperatures. The films, featuring a 5 nm-thick Cu layer, were tested under gamma-ray doses of up to 1500 mGy, displaying the highest TL intensity after annealing at 400 degrees C. Furthermore, annealing at 600 degrees C converted the films to the anatase phase, resulting in reduced roughness and improved grain size, porosity, transmittance, and absorption. The dosimetric parameters were comprehensively analyzed, focusing on homogeneity, dose-response, and repeatability, with a relative sensitivity of approximately 0.1035 compared to TLD-100, confirming their potential for TL dosimetry.