FEM modeling of magnetoelectric composites using line elements for thin film structure

被引:0
|
作者
Huang, Tianwen [1 ,2 ]
Talleb, Hakeim [1 ,2 ]
Gensbittel, Aurelie [1 ,2 ]
Becerra, Loic [3 ]
Zheng, Yunlin [3 ]
Marangolo, Massimiliano [3 ]
Ren, Zhuoxiang [1 ,2 ]
机构
[1] Sorbonne Univ, CNRS, Lab Genie Elect & Elect Paris, Paris, France
[2] Univ Paris Saclay, CentraleSupelec, CNRS, Lab Genie Elect & Elect Paris, Gif Sur Yvette, France
[3] Sorbonne Univ, Inst Nanosci Paris, CNRS, INSP,UMR 7588, Paris, France
关键词
Magnetoelectric; multiphysics problems; FEM; line element; magnetoelastic anhysteretic model; LAMINATE COMPOSITES; SIMULATION;
D O I
10.1177/1045389X241287578
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This study conducts a comprehensive computational analysis of thin film deposited magnetoelectric (ME) composites, focusing on two distinct configurations: the self-biased Ni/(YXl)163 degrees LiNbO3/Ni and the non-self-biased Ni/PZT-5H/Ni. This involves employing a multiphysics simulation tool based on the Finite Element Method (FEM). Our FEM modeling utilizes the line elements formulation, to facilitate the simulation of thin magnetostrictive Ni layers (10 mu m thick), and integrates a magnetoelastic anhysteretic model to account for the nonlinear interactions within the magnetostrictive coupling. This FEM model is capable of predicting the anhysteretic nonlinear ME behavior and the ME performance under optimal working condition.
引用
收藏
页数:9
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