Study of CdSe thin films using the spectroscopic ellipsometry method

被引:0
|
作者
Ibrahimova, L. N. [1 ,2 ]
Ahmadova, Kh. N. [3 ,4 ,5 ]
Aliyev, M. E.
Aliyev, Y. I. [6 ,7 ]
机构
[1] Minist Sci & Educ Republ Azerbaijan, Inst Nat Resources, Nakhchivan AZ-7000, Azerbaijan
[2] Nakhchivan State Univ, AZ-7012 Nakhchivan, Azerbaijan
[3] Minist Sci & Educ Republ Azerbaijan, Inst Phys, AZ-1143 Baku, Azerbaijan
[4] Azerbaijan State Oil & Ind Univ, AZ-1010 Baku, Azerbaijan
[5] Khazar Univ, Baku AZ-1096, Azerbaijan
[6] Azerbaijan State Pedag Univ, AZ-1000 Baku, Azerbaijan
[7] Western Caspian Univ, Baku AZ-1001, Azerbaijan
来源
CHALCOGENIDE LETTERS | 2024年 / 21卷 / 12期
关键词
Spectroscopic ellipsometry; CdSe; Thin films; Optical constants; OPTICAL-PROPERTIES;
D O I
10.15251/CL.2024.2112.1035
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this research, we investigated the optical properties of CdSe thin films on glass substrates using spectroscopic ellipsometry. The samples were analysed using an M-2000 rotation compensator spectroscopic ellipsometer at room temperature, covering a photon energy range of 1.5-7.0 eV. We used an appropriate dispersion model to obtain the spectral dispersion of the optical constants. We calculated the thickness, dielectric permittivity (real and imaginary parts), refraction, and extinction coefficients of the thin layers. The results showed high transparency that varied with the size of the CdSe thin films. Additionally, we determined the bandgap width for samples with thicknesses of 350 nm and 400 nm, which were produced using the chemical deposition method.
引用
收藏
页码:1035 / 1039
页数:5
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