Study on Si films deposited by ICPCVD using spectroscopic ellipsometry

被引：0
|
作者：
Wang Xiaoqiang [1 ]
He Deyan
Li Mingya
Zhen Congmian
Han Xiumei
机构：
[1] Northeastern Univ, Qingdao 066004, Peoples R China
[2] Lanzhou Univ, Lanzhou 730000, Peoples R China
[3] Hebei Normal Univ, Shijiazhuang 050016, Peoples R China
来源：
RARE METAL MATERIALS AND ENGINEERING | 2007年 / 36卷
关键词：
ICP-CVD; Si films; low-temperature growth; spectroscopic ellipsometry;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Si films were deposited by ICP-CVD at room temperature. After the analysis of Raman spectra and atomic force microscopy, the microstructure of sample was measured using Spectroscopic ellipsometry(SE), and fitting the structure associated EMA models. We find that the nanocrystalline film can be synthesized at room temperature by ICP-CVD. There is same conclusion for the fitting analysis of SE. There is intimate relationship between the microstructure of film and the SiH4 concentration. The results show that spectroscopic ellipsometry is an effective method for the study of film materials.
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收藏
页码：931 / 934
页数：4
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