Enhancing quantum memory lifetime with measurement-free local error

被引:0
|
作者
Park, Mincheol [1 ]
Maskara, Nishad [1 ]
Kalinowski, Marcin [1 ]
Lukin, Mikhail D. [1 ]
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
关键词
STABILITY;
D O I
10.1103/PhysRevA.111.012419
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Reliable quantum computation requires systematic identification and correction of errors that occur and accumulate in quantum hardware. To diagnose and correct such errors, standard quantum error-correcting protocols utilize global error information across the system obtained by mid-circuit readout of ancillary qubits. We investigate circuit-level error-correcting protocols that are measurement-free and based on local error information. Such a local error correction (LEC) circuit consists of faulty multi-qubit gates to perform both syndrome extraction and ancilla-controlled error removal. We develop and implement a reinforcement learning framework that takes a fixed set of faulty gates as inputs and outputs an optimized LEC circuit. To evaluate this approach, we quantitatively characterize an extension of logical qubit lifetime by a noisy LEC circuit. For the two-dimensional (2D) classical Ising model and four-dimensional toric code, our optimized LEC circuit performs better at extending a memory lifetime compared with a conventional LEC circuit based on Toom's rule in a subthreshold gate error regime. We further show that such circuits can be used to reduce the rate of mid-circuit readouts to preserve a 2D toric code memory. Finally, we discuss the application of the LEC protocol on dissipative preparation of quantum states with topological phases.
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页数:22
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