Polysilicon Modulator Utilizing CMOS-Compatible Local Excimer Laser Annealing Technology

被引：0

作者：

Lei, Kunhao ^{[1
]}

Wang, Lichun ^{[1
]}

Tang, Bo ^{[2
]}

Wei, Maoliang ^{[1
]}

Bao, Kangjian ^{[3
,4
]}

Chen, Zequn ^{[3
,4
]}

Ye, Yuting ^{[3
,4
]}

Sun, Boshu ^{[3
,4
]}

Jian, Jialing ^{[3
,4
]}

Li, Lan ^{[3
,4
]}

Li, Junying ^{[5
]}

Lin, Hongtao ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, Key Lab Micronano Elect & Smart Syst Zhejiang Prov, State Key Lab Brain Machine Intelligence, Hangzhou 310027, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China

[3] Westlake Univ, Sch Engn, Key Lab 3D Micro Nano Fabricat & Characterizat Zhe, Hangzhou 310030, Peoples R China

[4] Westlake Inst Adv Study, Inst Adv Technol, Hangzhou 310024, Peoples R China

[5] Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2025年 / 43卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Modulation; Waveguide lasers; Optical waveguides; Propagation losses; Doping; Couplers; Gratings; Excimer laser annealing; polysilicon modulator; racetrack resonator; AMORPHOUS-SILICON; PHOTONICS; FILMS;

D O I：

10.1109/JLT.2024.3451963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we demonstrated the improvement of response speed of doped-silicon modulators by localized excimer-laser annealing of the active region while preserving the integrity of the intrinsic waveguide. The racetrack modulator after laser annealing exhibits an extinction ratio of nearly 17 dB with a rising /falling time of 0.82/6.87 mu s and a pi phase shift power P pi of 27.2 mW. The utilization of a low-temperature deposited polysilicon modulator combined with a localized excimer laser annealing scheme facilitates the monolithic integration of 3D optoelectronic chips.

引用

页码：684 / 689

页数：6

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