Class AB Power Amplifier With A Differential Cold-FET Pre-Distorter

被引：0
|
作者：
Afifi, Ahmad [1 ]
Ragaai, Hani [1 ]
El-Nozahi, Mohamed [1 ]
机构：
[1] Ain Shams Univ, Elect & Commun Engn, Cairo, Egypt
来源：
2024 13TH INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS, ICCCAS 2024 | 2024年
关键词：
CMOS; cold-FET; power amplifier (PA); amplitude to amplitude modulation (AM-AM) distortion; pre-distorter; power added efficiency (PAE); LINEARIZER; DESIGN;
D O I：
10.1109/ICCCAS62034.2024.10652774
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A two stage class AB power amplifier (PA) for the frequency range 24-30 GHz is proposed. The PA relies on a cold-FET connected in a differential configuration to enhance the amplitude to amplitude modulation (AM-AM) distortion. In addition, a capacitor is added to improve the amplitude to phase modulation (AM-PM) distortion. Post-layout simulations using the 65nm CMOS technology node show an output 1dB compression point (OP1dB) higher by 1.8 dB and its power added efficiency (PAE) increases by 3.1% when compared to the PA without using the proposed differential cold-FET technique. The proposed PA achieves a gain of 18 dB with an AM-PM of 1.3 degrees. The peak saturated power (P-sat) is 16.5 dBm, with a peak PAE of 21.7%.
引用
收藏
页码：30 / 34
页数：5
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