A 29-dBm OIP3 Dual-Stage Power Amplifier with Analog Pre-Distorter in 0.18 μm CMOS for IoT Transceiver

被引：2

作者：

Mariappan, Selvakumar ^{[1
]}

Rajendran, Jagadheswaran ^{[1
,2
]}

Noh, Norlaili Mohd ^{[2
]}

Ramiah, Harikrishnan ^{[3
]}

机构：

[1] Univ Sains Malaysia, Collaborat Microelect Design Excellence Ctr CEDEC, Nibong Tebal, Malaysia

[2] Univ Sains Malaysia, Sch Elect & Elect Engn, Nibong Tebal, Malaysia

[3] Univ Malaya, Fac Engn, Dept Elect Engn, Kuala Lumpur, Malaysia

来源：

IETE JOURNAL OF RESEARCH | 2022年 / 68卷 / 03期

关键词：

Active inductor; Analog pre-distorter (APD); CMOS; Internet of things (IoT); Linearity; Power added efficiency (PAE); Power amplifier;

D O I：

10.1080/03772063.2019.1700178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low power consumption linear power amplifier (PA) for Internet of Things (IoT) application is presented. An analog pre-distorter (APD) is integrated to the PA, which consists of an active inductor, driver amplifier, and an RC phase linearizer. When measured with continuous wave signal, the PA produces more than 12 dB power gain from 2.4 to 2.5 GHz. At the centre frequency of 2.45 GHz, the PA's gain is 12.5 dB with peak power added efficiency (PAE) of 25.6% and maximum output power of 13.7 dBm. The OIP3 achieved is 29.2 dBm with supply voltage headroom of 1.8 V. The proposed APD befit to be a solution to reduce the trade-off between maximum linear output power and PAE.

引用

页码：2298 / 2304

页数：7