Measurement and Analysis of Surface Temperature Gradients on Magnetron Sputtered Thin Film Growth Studied Using NiCr/NiSi Thin Film Thermocouples

被引：1

作者：

Liu, Zhihui ^{[1
,2
]}

Yang, Yumeng ^{[3
]}

Sun, Yi ^{[1
]}

Guo, Tengda ^{[2
]}

Shen, Kai ^{[1
]}

Cheng, Yongjun ^{[4
]}

Wang, Bi ^{[5
]}

Hu, Kai ^{[2
]}

Zhang, Chuanbing ^{[2
]}

Hao, Gang ^{[1
]}

Zhou, Jiankang ^{[2
]}

Wu, Mengxuan ^{[2
]}

Cui, Baoli ^{[2
]}

Ding, Wanyu ^{[1
]}

Wang, Zixi ^{[2
]}

机构：

[1] Dalian Jiaotong Univ, Coll Mat Sci & Engn, Dalian 116028, Peoples R China

[2] Tsinghua Univ, State Key Lab Tribol Adv Equipment, Beijing 100084, Peoples R China

[3] Suzhou Univ Sci & Technol, Sch Mech Engn, Suzhou 215009, Jiangsu, Peoples R China

[4] CSSC, Lab Low Frequency Electromagnet Commun Technol 722, Wuhan 430200, Peoples R China

[5] State Key Lab High end Compressor & Syst Technol, Hefei 230031, Anhui, Peoples R China

来源：

SMALL | 2025年 / 21卷 / 01期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

film growth surface temperature; magnetron sputtering; NiCr/NiSi thin film thermocouple; static calibration; SEEBECK COEFFICIENT; SIZE;

D O I：

10.1002/smll.202404829

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In the general analysis of thin-film growth processes, it is often assumed that the temperature of the film growth surface is the same as the temperature of the film growth substrate. However, a temperature gradient exists between the film growth surface and film growth substrate. Using the growth surface of TiO2 thin films as an example, the temperature gradient of the film growth surface is tested and analyzed. A NiCr/NiSi thin-film thermocouple is fabricated using the direct-current pulse magnetron sputtering method. A three-layer NiCr/NiSi thin-film thermocouple temperature measurement system is established to measure the temperature gradient of the film growth surface. The growth surface temperature and substrate temperature of the TiO2 thin films are measured. For a sputtering power density of 0.83 W cm-2, the temperature difference between the first and second layers is 104.79 degrees C, while the temperature difference between the second and third layers is 39.92 degrees C. A standard K-type thermocouple is used to measure the substrate temperature, which is recorded to be 132.05 degrees C, consistent with common measurements of substrate temperature. The heat conduction on the film growth surface in the vacuum chamber is examined and a model for the temperature measurement device during film growth is constructed. The growth surface temperature and substrate temperature of a TiO2 thin film are measured by NiCr/NiSi thin-film and standard K-type patch thermocouples. In the process of TiO2 thin-film deposition, the absorption of heat energy mainly occurs on the film growth surface. A large temperature gradient exists from the film growth surface to the film growth substrate. The film growth surface temperature is considerably higher than the substrate temperature. Combined with the surface temperature of TiO2 film growth, the surface temperature of film growth has a crucial role. image

引用

页数：9

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